Cm12 6 and 8channel low capacitance esd protection arrays. This parameter is the collector to base breakdown voltage of a bipolar transistor. An infotrends study shows the typical office print job is three to five pages long. The heater is a pnp power transistor in a large to218 tab package. Transistors in the electronic parts department at parts. An internal reset circuit generates a reset pulse when the output 1 decrease below the regulated value. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0.
Datasheets bc847t, kst14, mmbt3904t, rt8561dgqw, zxt11n15df. The transistor is subdivided into tow group, o and y and according to its dc current gain. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. Ss9015 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 45 v vebo emitterbase voltage 5 v ic collector current 100 a.
Transistor specifications explained electronics notes. This is information on a product in full production. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. Jan 04, 2017 a673 datasheet silicon pnp transistor hitachi, 2sa673 datasheet, a673 pdf, a673 pinout, a673 manual, a673 schematic, a673 equivalent, a673 data. Npn generalpurpose transistors in a small sot23 toab surfacemounted device datashee plastic. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Transistor gain given hfe is only an approximate value. It is a blog created to share various information with you in more complete and detailed contents.
B 33 zelectrical characteristic curves input voltage. Even the mccormack amps sounds forward but has a similiar tube like quality. C1008 nte equvilent transistor npn silicon 140v ic1a to39 audio output video driver. This device is designed to lower noise figure in the region of low signal source impedance, and. Factory drop ship smaller orders ship within 5 days in stock. The current software version includes the data of more than 230 different ics. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. A wide variety of transistors k options are available to you, such as logic ics, triode transistor, and voltage regulator. Irf840, irf840 nchannel mosfet transistor, buy irf840 transistor. C1845 datasheet, c1845 pdf, c1845 data sheet, datasheet, data sheet, pdf. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Dtc114em dtc114ee dtc114eua transistors dtc114eka dtc114esa rev. C458 datasheet pdf, c458 pdf datasheet, equivalent, schematic, c458 datasheets, c458 wiki, transistor, cross reference, pdf download,free search site, pinout.
Savantic semiconductor product specification 3 silicon npn power transistors 2sc4242 package outline fig. Transistor bc datasheet sgs ates, bc extended view. This device utilizes stateoftheart diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Download the latest drivers, firmware, and software for your hp color laserjet cm12 multifunction printer.
In the software program, on the file menu, select print. Provides stepby step instructions for installing and setting up the product. Transistor 2sc17, 2sc18 silicon npn epitaxial planer type for lowfrequency power amplification and driver amplification unit. Savantic semiconductor product specification silicon npn power transistors 2sc3150 description with to220c package high breakdown voltage. Wide aso safe operating area applications 800v3a switching regulator applications pinning pin description 1base 2 collector. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type. It can also be used for the switching purpose just like other pnp transistors. When use as an audio frequency general purpose amplifier, can be operated in the active region. Hp color laserjet cm12 multifunction printer software and. The datasheet archive contains over 100 million electronic component datasheets. I want to share this experience and information with each other to create a blog that helps each other. Toshiba transistor silicon npn epitaxial type pct process 2sc2240 low noise audio amplifier applications the 2sc2240 is a transistor for low frequency and low noise applications.
C536 datasheet v cbo 40v, 2sc536, npn transistor wej. In this icdatabook software you will find pin assignments, connection layouts, function tables and the most important specifications available for the 40x and the 74x ic series. On special request, these transistors can be manufactured in different pin configurations. Transistor pin outs for low to medium power type transistors viewed from below. Marking of electronic components, smd codes 1n, 1n5, 1n. Hp color laserjet cp1515n and cp1518ni, hp color laserjet cp1215, hp color laserjet cm12 mfp. Obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. Toshiba transistor silicon pnp epitaxial type pct process. Data sheets contain information regarding a product macom technology solutions is considering for development. Mosvi 2sk switching regulator applications low drainsource on resistance. Rating collectoremitter voltage collectorbase voltage emitterbase voltage collector current continuous total device dissipation ta25c.
Hp color laserjet cm12 mfp ink cartridges for laser copier. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity. Save now on our wide selection of hpcolorlaserjetcm12mfp for your growing business from uk. Our company has our own inventory in large quantity that can meet all of your requirements and needs.
May 03, 2018 it can also be used for the switching purpose just like other pnp transistors. Toshiba power transistor semiconductor data book 1983. B2, december 2002 bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted pw5ms, duty cycle10%. Testing an audio power amp with paralleled transistors. Russian kt312v silicon transistor, nos retroamplis. C380 datasheet, c380 pdf, c380 data sheet, datasheet, data sheet, pdf. This pdf datasheet is available through the datasheet archive search engine. For 1, 2, and 4 channel devices, see the cm12a datasheet provides esd protection to iec6. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type no. Fast shipping on all bipolar transistors orders within europe. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Performance is based on target specifications, simulated results, andor prototype measurements. Bc547a transistor npn 45v 100ma to92 fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. This transistor is further divided into four groups according to the dc current gain, o, y, g, and l and has 140, 240, 400 and 700 hfe dc current gain respectively.
I used a tdam amplifier and the schematic shown in its datasheet. St 2sc3203 npn silicon epitaxial planar transistor for switching and af amplifier applications. Nchannel jfet transistor, gen purpose amp 25v 10ma nte3. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Im trying to update as much information as possible, even if i can not find perfect information. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise.
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